KASAMI Akinobu | Toshiba Research and Development Center, Toshiba Corporation
スポンサーリンク
概要
関連著者
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KASAMI Akinobu
Toshiba Research and Development Center, Toshiba Corporation
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Kasami Akinobu
Toshiba Central Research Laboratory
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TOYAMA Masaharu
Toshiba Research and Development Center
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Toyama Masaharu
Toshiba Central Research Laboratory
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Naito Makoto
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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BEPPU Tatsuro
Toshiba Research and Development Center, Toshiba Corporation
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Beppu Tatsuro
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Toyama Masaharu
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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TOYAMA Masaharu
Toshiba Research and Development Center, Tokyo Shibaura Electric Co. Ltd.
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IWAMOTO Masami
Toshiba Research and Development Center, Toshiba Corporation
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Beppu Tatsuro
Toshiba Research And Development Center Toshiba Corporation
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Iwamoto Masami
Toshiba Lighting & Technology Corporation
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Kasami Akinobu
Toshiba Research And Development Center Toshiba Corporation
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Sekiwa Tetsuo
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Tashiro Makoto
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Tashiro Makoto
Toshiba Research And Development Center Toshiba Corporation
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Maeda Keiji
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Naito Makoto
Toshiba Research And Development Center Toshiba Corp.:(present Address)optoelectronic Semiconductor
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Yahata Akihiro
Toshiba Research And Development Center Toshiba Corp.
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Yahata Akihiro
Toshiba Corporation
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Kasami Akinobu
Toshiba Research And Development Center Toshiba Corp.
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SEKIWA Tetsuo
Toshiba Research and Development Center, Toshiba Corp.
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Sekiwa Tetsuo
Toshiba Research And Development Center Toshiba Corp.:(present Address)optoelectronic Semiconductor
著作論文
- High-Efficiency GaP Green LED's with Double n-LPE Layers
- Growth and Properties of GaAs_xP_ Liquid-Phase Epitaxial Layers Grown on GaP
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : III. Effect of Holding Time at Growth Temperature
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : II. Effect of Substrate Orientation
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
- GaP Green Light-Emitting Diodes with p-n-p-n Structure
- Kinetics of Zn-O Complex Formation in GaP Crystal
- Electroluminescence Decay Time and Quantum Efficiency of GaP Green-Emitting Diodes