Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : III. Effect of Holding Time at Growth Temperature
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1971-01-05
著者
-
Naito Makoto
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
-
KASAMI Akinobu
Toshiba Research and Development Center, Toshiba Corporation
-
TOYAMA Masaharu
Toshiba Research and Development Center
-
Kasami Akinobu
Toshiba Central Research Laboratory
-
Toyama Masaharu
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
-
Toyama Masaharu
Toshiba Central Research Laboratory
-
TOYAMA Masaharu
Toshiba Research and Development Center, Tokyo Shibaura Electric Co. Ltd.
関連論文
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Free Electron Laser Oscillation down to the Deep UV Range Using a Small-Scale Storage Ring
- Lasing at 352 nm of the NIJI-IV Storage-Ring Free-Electron Laser
- High-Efficiency GaP Green LED's with Double n-LPE Layers
- P1-40 Imaging System for Ultrasonic Endoscopy by Using Transmitter-Receiver Pair in the Pulse Compression Technique(Poster session 1)
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Focusing Method in High-Impedance Material using Transmission Line Coupler : Ultrasonic Transmission Line Coupling Method
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Design of a New Optical Klystron for Developing Infrared Free Electron Lasers in the Storage Ring NIJI-IV
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- Development of a New System for Measuring Skull Bone Thickness by the Pulse compression Method
- Ultrasonic Flaw Detection for High Impedance Materials Using a Transmission Line Coupling Method
- High Signal-to-Noise Ratio Ultrasonic Point Detection Method using a Fused Quartz Rod as a Pulse Compression Filter and a Sensor
- Wide View-Angle Imaging Obtained by Compounding Multidirection Images through a Narrow Window
- Tungsten Photochemical Vapor Deposition Mechanism in WF_6+H_2 System : II. Gas-Molecule Adspecies Collision Model
- Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
- Decay Rate Plot of Stored Beam Current and Touschek Limit of Current-Lifetime Product
- Tungsten Photochemical Vapor Deposition Mechanism in WF_6+H_2 System : I. Adspecies Excitation Model
- Least Squares Analysis of Hall Data and Donor Levels in Gallium Phosphide
- Growth and Properties of GaAs_xP_ Liquid-Phase Epitaxial Layers Grown on GaP
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : III. Effect of Holding Time at Growth Temperature
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : II. Effect of Substrate Orientation
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
- Electron Mobility and Impurity Concentration in n-GaP Crystals Grown by Slow Cooling of Ga Solution
- GaP Green Light-Emitting Diodes with p-n-p-n Structure
- Green and Red Electroluminescences from Diffused Gallium Phosphide p-n Junctions
- Effect of Heat Treatment on Gallium Arsenide Crystals : III. Electrical Properties of Thermally Converted p-Type Crystals
- Effect of Heat Treatment on Gallium Arsenide Crystals : II. Properties of Crystals Heat-Treated in Chalcogen Vapor
- Kinetics of Zn-O Complex Formation in GaP Crystal
- Effect of Heat Treatment on Gallium Arsenide Crystals. : I. Thermal Conversion in Excess Arsenic Vapor
- Kinetics of the Vapor Growth of II-VI Compound Crystals. II. : Zinc Selenide
- Anomalous Capacitance in Gallium Phosphide Electroluminescent p-n Junctions
- Infrared and Red Photoluminescence in Gap: Zn, O
- Acceptors and the Edge Emissions in CdS and ZnSe
- Anisotropy of DC and High-Frequency Resistivity of Hexagonal Ferrite Zn_2Y
- Transmission of 100-MHz-range ultrasound through a fused quartz fiber
- Electron Spin Resonance Parameters in 6H Polytype of Silicon Carbide Crystal Doped with Boron
- Electroluminescence Decay Time and Quantum Efficiency of GaP Green-Emitting Diodes
- Recombination Kinetics in GaP Red-Emitting Diodes Determined by Photocurrent and Decay Characteristics