Electron Mobility and Impurity Concentration in n-GaP Crystals Grown by Slow Cooling of Ga Solution
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1969-03-05
著者
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Naito Makoto
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Kasami Akinobu
Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.
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Kasami Akinobu
Central Research Laboratory Tokyo Shibaura Electric Co.
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Toyama Masaharu
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Toyama Masaharu
Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.
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Naito Makoto
Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.
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TOYAMA Masaharu
Toshiba Research and Development Center, Tokyo Shibaura Electric Co. Ltd.
関連論文
- Efficiency of Red Luminescence in GaP
- Least Squares Analysis of Hall Data and Donor Levels in Gallium Phosphide
- Growth and Properties of GaAs_xP_ Liquid-Phase Epitaxial Layers Grown on GaP
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : III. Effect of Holding Time at Growth Temperature
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : II. Effect of Substrate Orientation
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
- Electron Mobility and Impurity Concentration in n-GaP Crystals Grown by Slow Cooling of Ga Solution
- Minority Carrier Lifetime in GaP Electroluminescent Diodes
- Kinetics of the Vapor Growth of II-VI Compounds Crystals
- New Acceptor Responsible for the Edge Emission in CdS
- Peak Shift of the Edge Emission in CdS with Excitation Intensity
- Valley-Orbit Splitting of Donor Level in GaP
- Infrared and Red Photoluminescence in Gap: Zn, O
- Acceptors and the Edge Emissions in CdS and ZnSe
- Behavior of Holes and Electrons in CdS as Revealed by Laser Excitation
- Effect of Heat-Treatment on the Edge Emission in CdS
- Anisotropy of Effective Electron Mass in Gallium Phosphide