New Acceptor Responsible for the Edge Emission in CdS
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1967-01-05
著者
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Iida Seishi
Central Research Laboratory Tokyo Shibaura (toshiba) Electric Co. Ltd.
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Toyama Masaharu
Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.
関連論文
- Electron Mobility and Impurity Concentration in n-GaP Crystals Grown by Slow Cooling of Ga Solution
- Time-Variation of Spectral Output of GaAs Diode Laser
- Shifts of Mode Spectra with Current in GaAs Laser
- Kinetics of the Vapor Growth of II-VI Compounds Crystals
- New Acceptor Responsible for the Edge Emission in CdS
- Peak Shift of the Edge Emission in CdS with Excitation Intensity
- Valley-Orbit Splitting of Donor Level in GaP
- Effect of Heat-Treatment on the Edge Emission in CdS
- Edge and Self-Activated Emissions in Zinc Selenide