Behavior of Holes and Electrons in CdS as Revealed by Laser Excitation

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概要

• 論文の詳細を見る

• Photoconductivity of CdS single crystals was measured at room temperature under argon ion laser excitation. For strong uniform excitation, photoelectron concentration reached a value independent of the excitation intensity and a fast-decay photoconductivity appeared. For strong surface excitation, a logarithmic variation of photoconductivity with excitation intensity was observed. These results are analysed on a two-recombination-center model; under strong excitation usual recombination center is completely occupied by hole and another center plays dominant role in recombination. Comparison between photoconductivities under uniform and surface excitations determines hole lifetime, ambipolar diffusion length and surface recombination velocity. Measurements of PEM effect and optical absorption induced by the excitation are consistent with the photoconductivity analysis. Characetristics of the recombination centers are quantitatively determined.

• 社団法人日本物理学会の論文
• 1968-04-05

著者

• Kasami Akinobu

  Central Research Laboratory Tokyo Shibaura Electric Co.

• Maeda Keiji

  Central Research Laboratory Tokyo Shibaura Electric Co.

関連論文

• Efficiency of Red Luminescence in GaP
• Electron Mobility and Impurity Concentration in n-GaP Crystals Grown by Slow Cooling of Ga Solution
• Minority Carrier Lifetime in GaP Electroluminescent Diodes
• Valley-Orbit Splitting of Donor Level in GaP
• Behavior of Holes and Electrons in CdS as Revealed by Laser Excitation
• Anisotropy of Effective Electron Mass in Gallium Phosphide

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