Minority Carrier Lifetime in GaP Electroluminescent Diodes

概要

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Diffusion length of minority carriers in GaP El, diodes was determined by measurements of diode photocurrent. Observations of angle-lapped diodes by scanning of electron beam and laser light enabled us to divide the sum of diffusion lengths into the diffusion lengths of electron and hole. Minority carrier lifetime in the space-charge region obtained from I-V characteristics is in reasonable agreement with that determined from photocurrent. The minority carrier lifetime is limited by deep recombination centers which are common in both the depletion layer and its adjacent regions. These centers were found to be annihilated by annealing. For diodes annealed under optimum conditions, the minority carrier lifetime varies proportionally to an inverse of the donor concentration of starting n type GaP crystals and is proportional to an inverse square of the free carrier concentration in the vicinity of the junction. These results suggest that an Auger process is predominant in the nonradiative recombination.
社団法人応用物理学会の論文
1969-01-05