Infrared and Red Photoluminescence in Gap: Zn, O
スポンサーリンク
概要
- 論文の詳細を見る
Intensity ratio of infrared to red photoluminescence in GaP crystals doped with various amounts of Zn and O is measured at room temperature. The ratio is constant for low Zn concentrations but decreases for higher Zn concentrations. The results are explained qualitatively by a simple model of excitonic recombination at Zn-O complex and infrared pair recombination.
- 社団法人応用物理学会の論文
- 1970-10-05
著者
-
Naito Makoto
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
-
Maeda Keiji
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
関連論文
- Least Squares Analysis of Hall Data and Donor Levels in Gallium Phosphide
- Growth and Properties of GaAs_xP_ Liquid-Phase Epitaxial Layers Grown on GaP
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : III. Effect of Holding Time at Growth Temperature
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : II. Effect of Substrate Orientation
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
- Electron Mobility and Impurity Concentration in n-GaP Crystals Grown by Slow Cooling of Ga Solution
- Double Injection in GaP Electroluminescent Diodes
- Green and Red Electroluminescences from Diffused Gallium Phosphide p-n Junctions
- Infrared and Red Photoluminescence in Gap: Zn, O