Recombination Kinetics in GaP Red-Emitting Diodes Determined by Photocurrent and Decay Characteristics

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The photocurrent characteristic of GaP red light-emitting diodes excited in the band centered at 5900Å below the band edge at room temperature was studied in a temperature range of 170-500°K. The characteristic band is explained in accordance with the thermal release of electrons from optically excited excitons bound to the Zn-O nearest neighbor pairs to the conduction band. The Zn-O pair concentration in the light-emitting region is determined accurately by analysing the results, The time-decay characteristics of the red electroluminescence were also measured to obtain the transition rates of electrons trapped at the Zn-O centers. At room temperature, the thermal release rate of electrons W_<II> is 1.8±0.2×10^6sec^<-1> and the electron capture cross section of the Zn-O center is deduced to be 5.9±1.5×10^<-16>cm^2 by using the observed binding energy of the center 300±10meV. The radiative recombination rate W_I and the non-radiative recombination rate W__<III> are estimated to be 1.6×10^6 and 2.4-3.4×10^6sec^<-1>, respectively. W_<III> seems to be determined by Auger process and depends largely on the free hole concentration in the active p region.
社団法人応用物理学会の論文
1970-08-05