High-Efficiency GaP Green LED's with Double n-LPE Layers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-11-05
著者
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Tashiro Makoto
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Tashiro Makoto
Toshiba Research And Development Center Toshiba Corporation
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IWAMOTO Masami
Toshiba Research and Development Center, Toshiba Corporation
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BEPPU Tatsuro
Toshiba Research and Development Center, Toshiba Corporation
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KASAMI Akinobu
Toshiba Research and Development Center, Toshiba Corporation
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Beppu Tatsuro
Toshiba Research And Development Center Toshiba Corporation
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Beppu Tatsuro
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Iwamoto Masami
Toshiba Lighting & Technology Corporation
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Kasami Akinobu
Toshiba Research And Development Center Toshiba Corporation
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Kasami Akinobu
Toshiba Central Research Laboratory
関連論文
- High-Efficiency GaP Green LED's with Double n-LPE Layers
- Correlation between Dislocation Pits in GaP LPE Layers and LEC Substrates
- Growth and Properties of GaAs_xP_ Liquid-Phase Epitaxial Layers Grown on GaP
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : III. Effect of Holding Time at Growth Temperature
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : II. Effect of Substrate Orientation
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
- Discomfort Glare Caused by White LED Light Sources(Regular Section)
- GaP Green Light-Emitting Diodes with p-n-p-n Structure
- Kinetics of Zn-O Complex Formation in GaP Crystal
- Luminescent Properties Variation toward Growth Direction in Nitrogen Doped GaP n-LPE Layer
- Anisotropy of DC and High-Frequency Resistivity of Hexagonal Ferrite Zn_2Y
- Electroluminescence Decay Time and Quantum Efficiency of GaP Green-Emitting Diodes
- Recombination Kinetics in GaP Red-Emitting Diodes Determined by Photocurrent and Decay Characteristics