Luminescent Properties Variation toward Growth Direction in Nitrogen Doped GaP n-LPE Layer

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概要

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• Variations of luminescent properties toward the growth direction were investigated at room temperature for nitrogen-doped n-type GaP liquid-phase epitaxial (LPE) layers grown on n-type liquid encapsulated Czochralski (LEC) substrates. Photoluminescence (PL) measurements of an angle-lapped epitaxial layer showed that green emission intensity increases rapidly toward the growth direction from the growth boundary near the LEC substrate. Properties of light-emitting diodes formed by growing a p-type epitaxial layer on this angle-lapped surface were also investigated. The green emission efficiency of the diodes is proportional to the green PL efficiency and inversely proportional to the red emission efficiency of the diodes. This red omission is found to be due to Zn-O pairs. The measured nitrogen concentration was nearly constant in the epitaxial layer. This result and a measurement of green electroluminescence decay time led to the conclusion that variation in green emission efficiency is mainly caused by a change in the lifetime of minority carriers.

• 社団法人応用物理学会の論文
• 1975-06-05

著者

• BEPPU Tatsuro

  Toshiba Research and Development Center, Toshiba Corporation

• Beppu Tatsuro

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.

関連論文

• High-Efficiency GaP Green LED's with Double n-LPE Layers
• Correlation between Dislocation Pits in GaP LPE Layers and LEC Substrates
• GaP Green Light-Emitting Diodes with p-n-p-n Structure
• Luminescent Properties Variation toward Growth Direction in Nitrogen Doped GaP n-LPE Layer
• Electroluminescence Decay Time and Quantum Efficiency of GaP Green-Emitting Diodes

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