GaP Green Light-Emitting Diodes with p-n-p-n Structure

概要

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Green light-emitting gallium phosphide diodes with p-n-p-n structure were obtained by means of double liquid-phase epitaxy onto a pulled GaP substrate in a graphite boat. The first n-region is the substrate crystal, the first p-region and the second n-region are formed in the first epitaxial layer, and the seconad p-region is the second epitaxial layer. Photoluminescence measurements showed that the p-region in the first epitaxial layer is formed by cross compensation of donor impurity with a carbon acceptor from the graphite boat. Negative resistance is observed in these diodes with a switching voltage of about 3 to 160 volts and with a holding voltage of about 2 volts. Switching time is inversely proportional to the difference between the applied voltage and switching voltage, and depends on the duty cycle of the applied voltage, particularly at low temperatures. Quantum efficiency of green emission after switch-on is about 1.5×10^<-4> at a current density of 10 Acm^<-2>.
社団法人応用物理学会の論文
1972-09-05