Kinetics of the Vapor Growth of II-VI Compound Crystals. II. : Zinc Selenide
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概要
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Vapor growth of ZnSe crystals was made by a modified Piper method in Ar atmosphere at relatively low temperatures, 1490°K and 1400°K. Temperature gradient was varied from 1.6 to 7.0 deg/cm and Ar pressure from 0.20 to 0.33 atm at 1490°K and from 0.03 to 0.09 atm at 1400°K. Single crystals of the size of 1 cm^3 were obtained at 1490°K. The growth rate was measured to be ranging from 10^<-8> to 10<-7> mol/cm^2 sec,and found to be limited by the diffusion process of vapors at l490°K but, if anything, by the vaporization or condensation process at 1400°K at low Ar pressures. Vaporization-rate constant under equilibrium vapor pressure, k^3, was estimated to be at least 2×10^3 mol/atm^3/^2cm^2 sec at 1400°K.
- 社団法人応用物理学会の論文
- 1969-07-05
著者
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TOYAMA Masaharu
Toshiba Research and Development Center
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SEKIWA Tetsuo
Toshiba Research and Development Center, Toshiba Corp.
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Sekiwa Tetsuo
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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