Electroluminescence Decay Time and Quantum Efficiency of GaP Green-Emitting Diodes

スポンサーリンク

概要

著者

関連論文

High-Efficiency GaP Green LED's with Double n-LPE Layers
Correlation between Dislocation Pits in GaP LPE Layers and LEC Substrates
Growth and Properties of GaAs_xP_ Liquid-Phase Epitaxial Layers Grown on GaP
Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : III. Effect of Holding Time at Growth Temperature
Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : II. Effect of Substrate Orientation
Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
Discomfort Glare Caused by White LED Light Sources(Regular Section)
GaP Green Light-Emitting Diodes with p-n-p-n Structure
Green and Red Electroluminescences from Diffused Gallium Phosphide p-n Junctions
Kinetics of Zn-O Complex Formation in GaP Crystal
Kinetics of the Vapor Growth of II-VI Compound Crystals. II. : Zinc Selenide
Luminescent Properties Variation toward Growth Direction in Nitrogen Doped GaP n-LPE Layer
Anisotropy of DC and High-Frequency Resistivity of Hexagonal Ferrite Zn_2Y
Electroluminescence Decay Time and Quantum Efficiency of GaP Green-Emitting Diodes
Recombination Kinetics in GaP Red-Emitting Diodes Determined by Photocurrent and Decay Characteristics

もっと見る

スポンサーリンク