Correlation between Dislocation Pits in GaP LPE Layers and LEC Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1978-03-05
著者
-
Tashiro Makoto
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
-
BEPPU Tatsuro
Toshiba Research and Development Center, Toshiba Corporation
-
HIRAHARA Keijiro
Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
-
WATANABE Masayuki
Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
-
Beppu Tatsuro
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
-
Watanabe Masayuki
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
-
Watanabe Masayuki
Toshiba Research And Development Center
-
Hirahara Keijiro
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
関連論文
- High-Efficiency GaP Green LED's with Double n-LPE Layers
- Correlation between Dislocation Pits in GaP LPE Layers and LEC Substrates
- GaP Green Light-Emitting Diodes with p-n-p-n Structure
- Luminescent Properties Variation toward Growth Direction in Nitrogen Doped GaP n-LPE Layer
- Characterization of Computer Controlled Gap Single Crystals : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Electroluminescence Decay Time and Quantum Efficiency of GaP Green-Emitting Diodes