Empirical Interatomic Potentials for Nitride Compound Semiconductors

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概要

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• Empirical interatomic potentials are determined for nitride compound semiconductors such as AlN, GaN and InN. The versatility of these empirical potentials is confirmed by the calculation of elastic constants for AlN, GaN and InN, and by the calculation of excess energies for various monolayer superlattices. The results compare favorably with available results experimentally and empirically. These empirical potentials for nitride compound semiconductors are as accurate as those already existing in the literature for semiconductors.

• 社団法人応用物理学会の論文
• 1998-05-15

著者

• Ito Tomonori

  Ntt System Electronics Laboratories

• Ito Tomonori

  Ntt System Electroncis Laboratories

関連論文

• A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
• Empirical Interatomic Potentials for Nitride Compound Semiconductors
• Simple Criterion for Wurtzite-Zinc-Blende Polytypism in Semiconductors
• Theoretical Investigation of the Adsorption Behavior of Si Adatoms on GaAs (001)-(2×4) Surfaces
• Electron Counting Monte Carlo Simulation of the Structural Change of the GaAs(001)-c (4×4) Surface during Ga Predeposition
• A Theoretical Inverstigation of Stable Lattice Sites for In Adatoms on GaAs(001)-(2×4) Surface
• Theoretical Investigations of Adsorption Behavior on GaAs(001) Surfaces

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