Controlled Formation of Narrow and Uniform InP-Based In0.53Ga0.47As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Attempts have been made to form precisely size-controlled, narrow and highly uniform In0.53Ga0.47As/In0.52Al0.48As ridge quantum wire arrays by selective molecular beam epitaxy (MBE) on patterned InP substrates. Precise size control of the wire has become possible by combining (1) control of the wire width through the growth time of the underlying InAlAs barrier layer and (2) the semi-self-limiting growth phenomenon in InGaAs wire layer growth. As a result, a minimum wire width of 35 nm was achieved in a controlled fashion. This wire showed large blue shift in the transition energy of 400 meV, which is the largest value ever reported for selectively grown InP-based InGaAs quantum wires. Using a high-temperature-grown InGaAs buffer layer, the wire uniformity was drastically improved, resulting in a minimum photoluminescence (PL) peak width of 28 meV, which indicates that the uniformity of the present wire is also the best of all the selectively grown InP-based InGaAs quantum wires reported so far.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-03-30
著者
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KIHARA Michio
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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HANADA Yuuki
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Kihara Michio
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering,
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Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of
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Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering,
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