Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate
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概要
- 論文の詳細を見る
Attempts were made to identify and remove the major sources of structural nonuniformity in the InGaAs ridge quantum wires (QWRs) grown by selective molecular beam epitaxy (MBE) on patterned substrates. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and cathodoluminescence (CL) were used to characterize the uniformity of ridge QWR@. Nonuniformity of the initial InGaAs ridge structure prior to QWR growth was found to be a key factor to be controlled. Using sufficient pre-growth etching and atomic-hydrogen-assisted cleaning in ultra-high-vacuum (UHV), a defect-free, oxide-free and flat InGaAs/InP interface was realized. By further optimizing the growth parameters using a low V/III beam-equivalent pressure ratio between 30 to 45 at a growth temperature of 500°C, an InGaAs ridge structure with an atomically flat facet having a standard deviation of the ridge top height of 0.25 nm for a 600 nm-long ridge stripe was realized, for the first time. InGaAs QWRs with various effective widths down to 6 nm were grown on this ridge structure, and they exhibited excellent optical properties with enhanced luminescence intensity and narrow linewidth.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
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Jiang Chao
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Muranaka Tsutomu
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University
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Muranaka Tsutomu
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Jiang Chao
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan
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