Thermal Stability of Au-Sn/Near Noble Metal Barrier Metallization Systems
スポンサーリンク
概要
- 論文の詳細を見る
We studied the reaction barrier characteriatics and thermal stability of evaporated Pd, Pt and Rh films when used with Au-Sn (30 wt% Sn). Sn in Au-Sn diffused preferentially into a barrier metal uniformly for all three metals. The diffusion coefficient was sufficiently small for Pt and Rh. Rh showed the samllest diffusion coefficient between 200℃ and 400℃ with the highest activation energy, 1.95 eV, below the melting point of Au-Sn (280℃). This result demonstrates the usefulness of Pt, and especially Rh, in highly stable metallization systems applicable to flip-chip integration.
- 社団法人応用物理学会の論文
- 1991-06-01
著者
-
WADA Osamu
Fujitsu Laboratories Ltd.
-
Wada Osamu
Fujitsu Laboratories
-
Kumai Tusgio
Fujitsu Laboratories Ltd.
関連論文
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
- Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
- Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
- 45° Grain Boundary Junctions in (001)-Oriented BiSrCaCuO Films
- AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering
- Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures
- U-shaped Effect of Drinking and Linear Effect of Smoking on Risk for Stomach Cancer in Japan
- Effect of Age on the Relationship between Gastric Cancer and Helicobacter pylori
- Long-term Effect of Helicobacter pylori Infection on Serum Pepsinogens
- Association between Family History and Gastric Carcinoma among Young Adults
- Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In_ Ga_ As/GaAs(311)B Quantum Dot Arrays(Optical Properties of Condensed Matter)
- Comparison of Optical Properties of In_Ga_As/GaAs(311)B Two-Dimensional Quantum Dot Superlattices and Quantum Wells
- Engineering Photonic Crystal Impurity Bands for Waveguides, All-Optical Switches and Optical Delay Lines(Special Issue on Ultrafast Optical Signal Processing and Its Application)
- Two-Dimensional In_Ga_As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth
- Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well
- Reactive Ion Etching of BiSrCaCuO Superconducting Thin Films using Ethane and Oxygen
- Effect of Alloy Scattering on Electron and Hole Impact Ionization Rates in Ga_In_xAs_yP_ Alloy System
- Analysis of Impact Ionization Phenomena in InP by Monte Carlo Simulation
- Ultrafast Optical Demultiplexer Using a Spincoated Squarylium-Dye Film(Special Issue on Ultrafast Optical Signal Processing and Its Application)
- All-Optical Two-Dimensional Serial-to-Parallel Pulse Converter Using an Organic Film with Femtosecond Optical Response
- All-Optical 2-D Serial-to-Parallel Pulse Converter Using an Organic Film with Femtosecond Optical Response
- Spin-coated Films of Squarylium Dye J-Aggregates Exhibiting Ultrafast Optical Responses
- Single Shot Demultiplexing of 1 THz Light Pulses by Time-to-Space Conversion Using a Film of Organic Dye J-Aggregates(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Monte Carlo Simulation of Gunn Domain Formations
- The Edge Overgrowth in Selective Deposition of GaAs
- Two-Dimensional 4 × 4 Optical Fiber Array Applied to a Monolithic LED Array
- Monolithic 1×4 Array of Uniform Radiance AlGaAs-GaAs LED's Grown by Molecular Beam Epitaxy
- An Improved Technique for Fabricating High Quantum Efficiency Ridge Waveguide AlGaAs/GaAs Quantum Well Lasers
- Current Switching Observed in Planar Gunn-Effect Device with Thin Active Layer
- Time Dependent Potential in Planar Gunn-Effect Device
- Evaluation of Deep Levels in Semiconductors Using Field Effect Transconductance
- An Improved Method of Determining Deep Impurity Levels and Profiles in Semiconductors
- The Effect of Heat Treatment on Al-GaAs Schottky Barriers
- Analysis of Capacitance of Planar AlGaAs/GaAs pin Photodiode
- Thermal Stability of Au-Sn/Near Noble Metal Barrier Metallization Systems
- Ohmic Contacts to p-GaAs with Au/Zn/Au Structure
- 1.5 μm Wavelength InGaAsP/InP DH LED with Improved Radiance Characteristics
- Modulation of Microwave Transmission by Acoustoelectric Domains in CdS