An Improved Technique for Fabricating High Quantum Efficiency Ridge Waveguide AlGaAs/GaAs Quantum Well Lasers
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概要
- 論文の詳細を見る
A technique has been developed for improving the quantum efficiency and the temperature stability of ridge waveguide AlGaAs/GaAs quantum well lasers. Excellent Basing characteristics, including a differential quantum efficiency of 75%, have been achieved in graded-index waveguide separate-confinement heterostructure single quantum well lasers fabricated by this technique.
- 社団法人応用物理学会の論文
- 1986-09-20
著者
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Wada Osamu
Fujitsu Laboratories
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Kuno Masaaki
Fujitsu Limited
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Wada Osamu
Fujitsu Limited
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SANADA Tatsuyuki
Fujitsu Laboratories Limited
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Sanada T
Fujitsu Limited
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