Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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Georgiev Nikolai
Festa Laboratories Femtosecond Technology Research Association
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GOPAL Achanta
FESTA Laboratories, The Femtosecond Technology Research Association
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YOSHIDA Haruhiko
FESTA Laboratories, The Femtosecond Technology Research Association
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MOZUME Teruo
FESTA Laboratories, The Femtosecond Technology Research Association
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KASAI Jun-ichi
FESTA Laboratories, Femtosecond Technology Research Association
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SIMOYAMA Takasi
FESTA Laboratories, Femtosecond Technology Research Association
関連論文
- Absorption Saturation of Intersubband Transition in InGaAs/AlAsSb Quantum Well Characterized by Absorption Spectral Analysis(Semiconductors)
- Temperature-Insensitive Intersubband-Transitions in InGaAs/AlAsSb Multiple Quantum Well Designed for Optical Communication Wavelength : Optical Properties of Condensed Matter
- Efficient All-Optical Interband Light Modulation by Ultrafast Manipulation of Intersubband Transitions in an Asymmetric Quantum Well
- Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy
- 1-V Josephson-Junction-Array Voltage Standard and Development of 10-V Josephson Junction Array at ETL
- Use of the Josephoson Junction Array Voltage Standard in Industry
- Ultrafast All-Optical Switching and Modulation Using Intersubband Transitions in Coupled Quantum Well Structures(Ultrafast Photonics)
- 1.45 μm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
- Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy