Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature

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概要

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• We have formed a SiO2 layer on a SiC surface by supercritical water (SCW) oxidation at a much lower temperature (400 °C) than that of conventional SiC thermal oxidation (1100 °C). This rapid oxidation at a low temperature is attributed to the high density of the oxidizers (H2O and O2) under a high-pressure condition. We also revealed that SCW oxidation under suitable conditions suppresses the formation of SiO2/SiC interface microroughness. The smooth SiO2/SiC interface obtained by this low-temperature oxidation process is expected to contribute to improving the mobility performance of future SiC field-effect transistors (FETs).

• 2010-04-25

著者

• Hidemitsu Aoki

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Aoki Hidemitsu

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Takashi Sugino

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Chiharu Kimura

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Taro Oe

  Organo Corporation, 1-2-8 Shinsuna, Koto, Tokyo 229-0012, Japan

• Naoyoshi Komatsu

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Takashi Futatsuki

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Futatsuki Takashi

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Oe Taro

  Organo Corporation, 1-2-8 Shinsuna, Koto, Tokyo 229-0012, Japan

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• Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature
• Low-Temperature and Rapid Oxidation of GaN Surface by Saturated Water Vapor at High Pressure
• Effects of an Electric Field and a Solvent during Thermal Treatment in Film Formation of Poly(vinylidene fluoride–tetrafluoroethylene)

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