Low-Temperature and Rapid Oxidation of GaN Surface by Saturated Water Vapor at High Pressure

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概要

• 論文の詳細を見る

• A gallium oxide layer was successfully formed on a GaN surface by saturated water vapor oxidation at a high pressure (350 °C, 16.5 MPa). Ga oxide thickness can be controlled in the 5–1,000 nm range by such oxidation process for 15 min. Saturated water vapor oxidation is a rapid and very low temperature oxidation process compared with the conventional thermal oxidation of GaN. This rapid oxidation potential at a low temperature is attributed to the high density of the oxidizer (H2O) under high-pressure condition. By applying post-treatment with high-pressure hot water, residual nitrogen in the oxide layer is removed and the stoichiometric composition of Ga2O3 is observed by X-ray photoelectron spectroscopy (XPS). The removal of nitrogen from the oxide by the high-pressure hot water is caused by its high solubility of inorganic compounds. Rapid and low-temperature oxidation can be applicable to the fabrication of a high-performance device without thermal stress for GaN-field effect transistors (FETs).

• 2009-04-25

著者

• Aoki Hidemitsu

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Kimura Chiharu

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Futatsuki Takashi

  R&D Center, Organo Corp., 4-4-1 Nishionuma, Sagamihara, Kanagawa 229-0012, Japan

• Oe Taro

  R&D Center, Organo Corp., 4-4-1 Nishionuma, Sagamihara, Kanagawa 229-0012, Japan

• Komatsu Naoyoshi

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Sugino Takashi

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Oe Taro

  R&D Center, Organo Corp., 4-4-1 Nishionuma, Sagamihara, Kanagawa 229-0012, Japan

• Futatsuki Takashi

  R&D Center, Organo Corp., 4-4-1 Nishionuma, Sagamihara, Kanagawa 229-0012, Japan

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