Epitaxial Growth of Bi(2201) Phase in Atomic Layer-by-Layer Deposition by Ion Beam Sputtering Method (Special Issue on High-Temperature Superconducting Electronics)
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概要
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Bi_2Sr_2CuO_x (Bi(2201)) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone / oxygen mixture gas of typical pressure of 5.0×10^<-5> Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi(2201) is formed at the early deposition stage of less than 10 units cell and then Bi(2201) oriented along the c-axis is grown.
- 社団法人電子情報通信学会の論文
- 1993-08-25
著者
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SAKAI Kazuo
Yaizu Suisan Kagaku Industry Co.
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Aoki R
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Aoki R
Osaka Univ. Suita
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Aoki Ryozo
Osaka University Department Of Electrical Engineering
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Aoki Ryozo
Faculty Of Engineering Osaka University
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SAKAI Kazuo
Faculty of Pharmaceutical Sciences, Chiba University
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Migita Shinji
National Institute Of Advanced Industrial Science And Technology
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Migita Shinji
Faculty of Engineering, Osaka University
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Ota Hiroyuki
Faculty of Engineering, Osaka University
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Otera Hiroshi
Faculty of Engineering, Osaka University
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Sakai Kazuo
Faculty Of Engineering Yamanashi University
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Ota Hiroyuki
Osaka University Department Of Electrical Engineering
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