Kamiya Itaru | Toyota Technological Inst. Nagoya Jpn
スポンサーリンク
概要
関連著者
-
Kamiya Itaru
Toyota Technological Inst. Nagoya Jpn
-
Tanaka Ichiro
Department of Biology. Faculty of Science, Nagoya University
-
Hara Masahiko
Department of Cardiology, Osaka Rosai Hospital
-
YAMAGUCHI Masafumi
Toyota Technological Institute
-
Kamiya Itaru
Toyota Technological Institute
-
Ohtsuki Osamu
Department Of Materials Science And Chemistry Wakayama University
-
Uno Kazuyuki
Wakayama Univ. Wakayama Jpn
-
Uno Kazuyuki
Department Of Electronic Science And Engineering Kyoto University
-
Kajimoto Kaori
Department of Materials Science and Chemistry, Wakayama University, 930 Sakaedani, Wakayama 640-8510
-
Murase Tomohide
Mitsubishi Chemical Group Science and Technology Research Center, 1000 Kamoshida-cho, Aoba-ku, Yokoh
-
Asami Harumi
Mitsubishi Chemical Group Science and Technology Research Center, 1000 Kamoshida-cho, Aoba-ku, Yokoh
-
Hara Masahiko
Department Of Electronic Chemistry Tokyo Institute Of Technology
-
Asami Harumi
Mitsubishi Chemical Group Science And Technology Research Center
-
Kajimoto Kaori
Department Of Materials Science And Chemistry Wakayama University
-
Murase Tomohide
Mitsubishi Chemical Group Science And Technology Research Center
-
Tanaka Ichiro
Department Of Biology Faculty Of Science Nagoya University
-
Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
-
Sasaki Takuo
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Sasaki Takuo
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Shimomura Kenichi
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Suzuki Hidetoshi
University of Miyazaki, Miyazaki 889-2154, Japan
-
Takahasi Masamitu
Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan
-
Kamiya Itaru
Toyota Technological Institute, Nagoya 468-8511, Japan
著作論文
- Improved Height Measurement of Single CdSe Colloidal Quantum Dots by Contact-Mode Atomic Fore Microscopy Using Carbon Nano-Tube Tips ; for the Investigation of Current-Voltage Characteristics
- Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)