Indirect Exciton Absorption in Germanium
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概要
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The indirect exciton absorption in germanium has been investigated using a high-sensitive wavelength modulation technique. The spectrum shows that the structures of indirect-allowed and -forbidden transitions have been clearly identified. It has been established experimentally that the LO phonon-assisted indirect transition is attributed to a forbidden transition, as expected by considerations of the selection rule. The TA phonon-assisted indirect exciton absorption spectrum is interpreted as due to a type of indirect transition which has the optical process for vertical direct transitions allowed and the scattering process for electron-phonon interaction forbidden: the intermediate state in the virtual transition is attributed to Λ_3 state, whereas the allowed LA phonon-assisted transition is related to the lowest Γ_<2'> intermediate state.
- 社団法人日本物理学会の論文
- 1974-10-15
著者
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Nishino Taneo
Faculty Of Engineering Science Osaka University
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Nishino Taneo
Faculty Of Engineering Kobe University
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Hamakawa Yoshihiro
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
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TAKEDA Mitsugu
Faculty of Engineering Science, Osaka University
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Takeda Mitsugu
Faculty Of Engineering Science Osaka University:(present Address) Mitsubishi Electric Corporation
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