Improvement of Luminous Efficiency in ZnS:Tb, F Thin-Film Electroluminescent Devices Using Ferroelectric PbTiO3 and Silicon Nitride as Carrier Accelerating Buffer Layers
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概要
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Thermal carrier accelerating action and its effect on electroluminescence performance by insertion of a buffer layer have been systematically studied in ZnS:Tb, F thin-film electroluminescent (EL) devices. The EL devices studied have a structure of ITO/PbTiO3/ZnS:Tb, F/SiNx/Al. The result shows that the brightness obtained is rather low, but luminous efficiency is high compared to that of EL devices without an SiNx buffer layer. A mechanism for the improvement of luminous efficiency is postulated, and the role of the buffer layer is also discussed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-12-20
著者
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
-
Fukao Ryuzo
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560
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Fujikawa Hisayoshi
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560
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