Crystal Growth Mechanism of Spherical Silicon Fabricated by Dropping Method
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概要
- 論文の詳細を見る
We have investigated the crystal growth mechanism of spherical Si fabricated by a dropping method. The Si spheres were classified into two categories by surface morphology. The grain size of a Si sphere with a smooth surface is larger than that with a rough surface. To investigate the crystal growth mechanism of the spheres, Si samples with various crystal sizes were observed. Si sample size is related to Si droplet size of, which influences the ease of solidification. Large Si droplets take longer to solidify than small Si droplets. Si samples 4, 2 and 1 mm in diameter correspond to the initial, intermediate and final stages of crystal growth, respectively. In the Si sample 4 mm in diameter, a disk of (111) plane crystals is observed. This result suggests that the initial crystal growth of the Si spheres consisting of large grains involves the formation of a disk of (111) plane Si crystals. The crystal growth mechanism for a Si sphere 1 mm in diameter is proposed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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TAKAKURA Hideyuki
Faculty of Engineering Science, Osaka University
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MUROZONO Mikio
Clean Venture 21 Co.
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Omae Satoshi
Faculty Of Science And Engineering Ritsumeikan University
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Minemoto Takashi
Faculty Of Science And Engineering Ritsumeikan University
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
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Hamakawa Yoshihiro
Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan
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Minemoto Takashi
Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan
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Takakura Hideyuki
Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan
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Omae Satoshi
Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan
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