Electronic Properties of GaAs Thin Film Deposited on Silica Substrate by RF Sputtering
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概要
- 論文の詳細を見る
Electrical conductivity on GaAs thin film deposited by RF sputtering was measured, and temperature dependence was analyzed. The film has very low conductivity in the range of 10^<-4>Ω^<-1&gr;cm^<-1;>, and the activation energy of the conductivityis 0.67 eV. The conductivity is strongly limited by the high density of deep oxygen impurity as well as by grain boundaries.
- 社団法人応用物理学会の論文
- 1992-03-15
著者
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TAKAKURA Hideyuki
Faculty of Engineering Science, Osaka University
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Tsuji S
Central Research Laboratory Mitsubishi Cable Insutries Ltd.
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Takakura H
Faculty Of Science And Engineering Ritsumeikan University
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TSUJI Seiji
Central Research Laboratory, Mitsubishi Cable Insutries, LTD.
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IRI Eiji
Electro-Communication Laboratory, Mitsubishi Cable Industries, LTD.
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Iri E
Electro-communication Laboratory Mitsubishi Cable Industries Ltd.
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