Electrical and Optical Properties of Si-SnO_2 Heterojunctions
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概要
- 論文の詳細を見る
Electrical and optical properties have been investigated on Si-SnO_2 heterojunctions. Semiconducting SnO_2 film has been grown by a successive oxidation of the evaporated tin on the (111) surface of silicon single crystal. The SnO_2 film shows the properties of a degenerate n-type semiconductor having the band gap energy of 3.5eV. The current-voltage characteristics of Si-SnO_2 n-n heterojunction represent a good rectification. The photovoltage measurements demonstrate that the Si-SnO_2 n-n heterojunction has the photoresponse in the wide wavelength region from 400 to 1200 mμ at room temperature. The energy band diagram of Si-SnO_2 n-n heterojunction is determined from the results of these electrical and optical measurements.
- 社団法人応用物理学会の論文
- 1970-09-05
著者
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Nishino Taneo
Faculty Of Engineering Science Osaka University
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Nishino Taneo
Faculty Of Engineering Kobe University
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Hamakawa Yoshihiro
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
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