The Effect of Nitrogen on Thermal Diffusion in HfO_2-based Gate Dielectrics
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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KANETA Chioko
FUJITSU Laboratories Ltd.
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Kaneta Chioko
Fujitsu Laboratories Limited
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TAKAHASHI Norihiko
Fujitsu Laboratories Limited
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YAMASAKI Takahiro
Fujitsu Laboratories Limited
関連論文
- Investigation of Degradation model for Ultra-thin Gate Dielectrics
- Trap Generation Induced by Local Distortion in Amorphous Silicon Dioxide Film
- The Effect of Nitrogen on Thermal Diffusion in HfO_2-based Gate Dielectrics
- Hole Trapping Due to Impurities in Amorphous Silicon Dioxide
- Interface States due to Intrinsic Defects in Si(100)/SiO_2
- Trap Generation Induced by Local Distortion in Amorphous Silicon Dioxide Film