Trap Generation Induced by Local Distortion in Amorphous Silicon Dioxide Film

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概要

• 論文の詳細を見る

• The generation mechanism, the stable atomic configuration, and the properties of intrinsic charge traps in amorphous silicon dioxide (a-SiO2) are investigated employing the ab initio molecular orbital method applied to a cluster model. It is found that an injected hole is trapped in a nonbonding 2p orbital of an oxygen atom even though there are initially no defects and impurities in a-SiO2. Thus, it acts as a trap for an electron. The local distortion in a-SiO2 structure, especially the stretching of a Si–O–Si, induces the hole trapping. It is also found that the effect of the local distortion on electron trapping is small.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Kaneta Chioko

  Fujitsu Laboratories Limited

• Kaneta Chioko

  Fujitsu Laboratories Ltd., 10-1, Morinosato-Wakamiya, Atsugi 243-01, Japan

関連論文

• Investigation of Degradation model for Ultra-thin Gate Dielectrics
• Trap Generation Induced by Local Distortion in Amorphous Silicon Dioxide Film
• The Effect of Nitrogen on Thermal Diffusion in HfO_2-based Gate Dielectrics
• Hole Trapping Due to Impurities in Amorphous Silicon Dioxide
• Interface States due to Intrinsic Defects in Si(100)/SiO_2
• Trap Generation Induced by Local Distortion in Amorphous Silicon Dioxide Film

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