Effects of N_2O Plasma Treatment for Low Temperature Polycrystalline Silicon TFTs(Special Issue on Electronic Displays)

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概要

• 論文の詳細を見る

• We present the effects of N_2O plasma treatment for hot carrier reliability and gate oxide stability in excimer-laser annealed poly-Si TFTs. N_2O plasma treatment between SiO_2 and poly-Si suppresses both the reduction in mobility caused by hot carrier stress and the V_th shift caused by gate bias stress. The results of XPS spectra and the energy distribution of the trap state density of stressed TFTs show that the introduction of Si-N bonds plays an important role in poly-Si TFT reliability.

• 社団法人電子情報通信学会の論文
• 2002-11-01

著者

• Ebiko Y

  Fujitsu Lab. Ltd. Atsugi Jpn

• Ebiko Yoshiki

  Fujitsu Laboratories Ltd.

• Ebiko Yoshiki

  Fujitsu Laboratories Limited

• MISHIMA Yasuyoshi

  Fujitsu Laboratories Ltd.

• Mishima Y

  Fujitsu Laboratories Ltd.

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• Effects of N_2O Plasma Treatment for Low Temperature Polycrystalline Silicon TFTs(Special Issue on Electronic Displays)
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