量子閉じ込め効果が薄膜SOI MOSFETの電気特性に与える影響について

概要

論文の詳細を見る
The characteristics of ultrathin-body (UTB) SOI MOSFETs, whose SOI-channel thickness T_<SOI> is thinner than the inversion-layer thickness of bulk MOSFETs, are investigated. It is found for the first time that at low temperatures (<50 K) the mobility of the UTB MOSFETs coincides with that of thicker body SOI MOSFETs in spite of the fact that at room temperature the mobility of UTB MOSFETs decreases as T_<SOI> decreases. It is experimentally demonstrated for the first time that the gate-channel capacitance of the UTB MOSFETs increases as T_<SOI> decreases. In addition, it is demonstrated that the physical origins of the threshold voltage increase in UTB MOSFETs can be categorized as the mobility degradation and a subband energy level increase. All these results are consistently explained in terms of quantum-mechanical effects.
社団法人電子情報通信学会の論文
2002-01-15