高移動度チャネルを有するひずみ Si-on-insulator/ ひずみ SiGe-on-insulator デュアルチャネルCMOSの作製と電気特性

概要

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Mobility enhancement technologies by incorporating strain in MOSFETs have been recognized as key technologies for scaled CMOS devices. The most promising channel materials for n- and p-channel MOSFETs are tensily-strained Si and compressively-strained Ge (SiGe), respectively, from the viewpoint of their high mobility values. In this paper, dual channel CMOS structures with strained Si-on-insulator (strained-SOI)-nMOSFETs and strained SiGe-on-insulator (strained-SGOI)-pMOSFETs are demonstrated as well as their high channel mobility and current drive enhancements. Strained Si channels on a relaxed SGOI substrate and Ge-rich strained SGOI channels are located on the nMOS and pMOS regions of the same wafer, respectively. The dual channel structure was fabricated by a CMOS process combined with the Ge condensation process, in which the epitaxially grown SiGe layer on the SOI substrate was locally oxidized at high temperatures. As a result, significant electron- and hole-mobility enhancements for the strained SOI and SGOI channels were observed as well as the drain current enhancements. Based on the measured mobility for the nMOS and pMOS channels in the CMOS devices, CMOS performance enhancement of 30% was estimated.
社団法人電気学会の論文
2006-11-01