Partial Recovery of Photodegradation at Room Temperature in Hydrogenated Amorphous Silicon
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概要
- 論文の詳細を見る
Detailed ESR measurements disclosed that neutral Si dangling bonds (DBs) created by light soaking (LS) disappear partially at room temperature in a few hours after LS. In contrast metastable DBs created by thermal quenching remain unchanged at room temperature. It is suggested that a part of the Si DBs created by LS have a small activation energy for thermal annealing.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-03-15
著者
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MAEHARA Takanori
Department of Digital Engineering.
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Mitani Masahiro
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Mitani Masahiro
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kanazawa University, Kodatsuno, Kanazawa 920-8667, Japan
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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Shimizu Tatsuo
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kanazawa University, Kodatsuno, Kanazawa 920-8667, Japan
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