Creation of E' Centers in Silica by Glow-Discharge Plasma and Their Annealing : Condensed Matter

スポンサーリンク

概要

• 論文の詳細を見る

• ESR measurements were performed for silica glasses exposed to rf plasma of various kinds of gases. During a short time of exposure, UV light emitted from the plasma created E' centers in the bulk of glass. After a long time of exposure, the density of E' centers decreased by the influence of plasma or high-energy UV light on the surface. The remnant E' centers were easily annealed out, even at room temperature.

• 社団法人応用物理学会の論文
• 1988-11-20

著者

• KUMEDA Minoru

  Department of Electronics, Faculty of Technology, Kanazawa University

• Kumeda Minoru

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• NAGANO Hiroki

  Department of Electronics, Faculty of Technology, Kanazawa University

• KIWAKI Minori

  Department of Electronics, Faculty of Technology, Kanazawa University

• SHIMIZU Tashio

  Department of Electronics, Faculty of Technology, Kanazawa University

• Kiwaki Minori

  Department Of Electronics Faculty Of Technology Kanazawa University

• Nagano Hiroki

  Department Of Electronics Faculty Of Technology Kanazawa University

• Shimizu Tashio

  Department Of Electronics Faculty Of Technology Kanazawa University

• Kumeda Minoru

  Department of Electric and Electronic Engineering. Kanazawa University

関連論文

• Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
• Identification of a New Defect in Silicon Nitride Films
• Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
• Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
• a-Si_O_x:H Films Prepared by Direct Photo-CVD Using CO_2 Gas : Condensed Matter
• Influence of Sub-Gap Illumination on Light-Induced ESR in Undoped a-Si:H
• Temperature-Independent Photoluminescence in Amorphous Si_C_x:(F,H) Films with Low Defect Density
• Glow Discharge a-Si_C_x: H Films Studied by ESR and IR Measurements
• ESR and IR Studies on a-Si_Ge_x: H Prepared by Glow Discharge Decomposition
• Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods
• Thin Film Patterning by Laser Lift-Off
• Comparative Study of Defect Densities Evaluated by Electron Spin Resonance and Constant Photocurrent Method in Undoped and N-Doped Hydrogenated Amorphous Silicon
• Electron-Beam-Induced Nucleation Centers and Selective Deposition of Thin Zinc Films
• Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films : Semiconductors
• Partial Recovery of Photodegradation at Room Temperature in Hydrogenated Amorphous Silicon
• Relation between Electron-Spin-Resonance and Constant-Photocurrent-Method Defect Densities in Hydrogenated Amorphous Silicon
• Change of Spin-Lattice Relaxation Time with Light Soaking for Defects in Hydrogenated Amorphous Silicon
• Relation between ESR and Hydrogen in Magnetron-Sputtered a-Ge:H
• Light-Intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films
• Hydrogen Incorporation Scheme in Amorphous-Microcrystalline Mixed-Phase Si: H Films
• Role of Hydrogen and Fluorine in Amorphous Silicon as Elucidated by NMR and ESR
• NMR and IR Studies on Hydrogenated Amorphous Si_C_x Films
• F and ^1H NMR and ESR in a-Si:F:H and a-Si:H
• Influence of Hydrogen Content and Si-H Bond Structure on Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon Films
• Light-Induced-ESR Study of Undoped and N-Doped Hydrogenated Amorphous Silicon
• Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
• Light Soaking of a-Si:H at 77 K
• Structure of Films Prepared by Glow Discharge Decomposition of Hexafluorodisilane
• Hydrogen Incorporation Scheme in a-Si_C_x:H
• Rate Equations for the Creation of Various Metastable Dangling Bonds in a-Si:H Mediated by Floating Bonds
• Properties of Amorphous Si Prepared by RF Sputtering with a High Ar Pressure
• Influence of Oxygen and Deposition Conditions on RF-Sputtered Amorphous Si Films
• Structural Studies on Hydrogenated Amorphous Germanium-Carbon Films Prepared by RF Sputtering
• NMR and ESR Studies on a-Si:H Prepared by Glow Discharge Decomposition of Si_2H_6
• ESR Study on Silica Exposed to Glow-Discharge Plasma and UV Light
• Creation of E' Centers in Silica by Glow-Discharge Plasma and Their Annealing : Condensed Matter
• A Model for the Staebler-Wronski Effect Based on Charged Impurities
• The Effects of H and F on the ESR Signals in a-Si
• The g-Values of Defects in Amorphous C, Si and Ge
• Effect of Charged Defects on Properties of Amorphous Si-Based Alloys
• ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors
• ESR and X-Ray Diffraction Studies on Ba-Y-Cu-O Superconductors : Electrical Properties of Condensed Matter
• Relationship between Photodarkening and Light-Induced ESR in Amorphous Ge-S Films Alloyed with Lead
• Light-Induced Effects and Their Annealing Behavior in a-Si:H
• Photo-Induced ESR in Amorphous Si_N_x:H Films
• Effect of Reduction in Impurity Content for a-Si:H Films
• ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:H
• Hydrogen Evolution from Amorphous Si-N Films
• Light-Induced Effects in a-Si:H Studied by ESR and Electrical Measurements
• Evidence of the Existence of SiF_4 Molecules in Fluorinated Amorphous Silicon
• ESR in Hydrogenated Amorphous Silicon
• Partial Recovery of Photodegradation at Room Temperature in Hydrogenated Amorphous Silicon
• Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPM
• Light-Intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon–Nitrogen Alloy Films

もっと見る 閉じる

スポンサーリンク