<19>F and ^1H NMR and ESR in a-Si:F:H and a-Si:H
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概要
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F NMR signal consists of only a broad line for as-deposited film, while H NMR signals are composed of broad and narrow lines. Most F atoms, therefore, are considered to exist in the closely gathered phase. The total F content does not appreciably change by annealing to 600℃, but a narrow line appears at 450℃, suggesting the change of incorporation scheme of F. Annealing makes the content of H contributing to the broad line decrease faster than that contributing to the narrow line. The change in ESR center density by annealing is discussed in relation to the change of NMR signals.
- 社団法人応用物理学会の論文
- 1981-06-05
著者
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Ueda Shigenori
Department Of Material Physics Graduate School Of Engineering Science Osaka University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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UEDA SHOICHI
Department of Urology, Kumamoto University
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Ueda Shoichi
Department Of Electronics Faculty Of Technology Kanazawa University
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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SHIMIZU Tatuo
Department of Electronics Faculty of Technology, Kanazawa University
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Shimizu Tatuo
Department Of Electronics Faculty Of Technology Kanazawa University
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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KUMEDA Minoru
Department of Electronics Faculty of Technology, Kanazawa University
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