Study of the Surface of CdTe Treated in H2 Plasma
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概要
- 論文の詳細を見る
The surface of CdTe can be cleaned using H2 plasma. Native oxide and thin Te layers on the CdTe surface are removed at a temperature higher than 100°C. The photoluminescence intensity of edge emission became largest as the surface of CdTe was treated in H2 plasma at a temperature of about 100°C. From the intensity of the defect-related emission band in photoluminescence spectra of H2-treated films, it is concluded that the surface treatment of CdTe by H2 plasma at 170°C is most appropriate.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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NISHIBAYASHI Yoshiki
Department of Electrical Engineering, Hiroshima University
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Tokumitsu Yoji
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Imura Takeshi
Department of Chemistry, Faculty of Engineering Science, Osaka University
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Nishibayashi Yoshiki
Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724
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