SiC のステップ制御エピタキシャル成長とステップダイナミクス

概要

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Polytype-controlled epitaxial growth of SiC has been achieved by utilizing step-flow growth on off-oriented SiC{0001} substrates by chemical vapor deposition (step-controlled epitaxy). Very little polarity dependence and small activation energy (2.8 kcal/mol) in step-controlled epitaxy can be explained by the fact that SiC growth is diffusion-control. The step bunching on the surfaces of 6H- and 4H-SiC epilayers is investigated with AFM and cross-sectional TEM. The formation of multisteps with half unit-cell height or unit-cell height (3 or 6 Si-C bilayer-height steps in 6H-SiC) may be inherent to SiC growth, due to the peculiar stacking sequence of SiC. Through short-time growth experiments, nucleation on {0001} terraces and step dynamics are also studied. The polarity dependence of nucleation and the anistropy in lateral growth rate are presented.
日本結晶成長学会の論文
1996-03-25