Model-Adaptable Parameter Extraction System for MOSFET Models

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概要

• 論文の詳細を見る

• This paper describes a parameter extraction system that can easily accommodate many MOSFET models. The model-adaptability is contributed by two factors; a model-adaptable initial value estimation technique and an environment which stores and reuses extraction procedures. A designer can easily develop an extraction procedure for a new MOSFET model by modifying a procedure for another MOSFET model developed previously. We have verified that the system is suitable for major SPICE models.

• 社団法人電子情報通信学会の論文
• 1995-05-25

著者

• 小野寺 秀俊

  京都大学工学部電子工学科

• Onodera H

  Kyoto Univ. Kyoto‐shi Jpn

• Onodera Hidetoshi

  Kyoto Univ. Kyoto‐shi Jpn

• Morie T

  Graduate School Of Life Science And Systems Engineering Kyushu Institute Of Technology

• Morie Takashi

  Faculty Of Engineering Kyoto University

• 小野寺 秀俊

  滋賀県立大学工学部

• 小野寺 秀俊

  京都大学大学院工学研究科電子通信工学専攻

• Kondo Masaki

  Faculty of Engineering, Kyoto University

• Onodera Hidetoshi

  Faculty of Engineering, Kyoto University

• Tamaru Keikichi

  Faculty of Engineering, Kyoto University

• Kondo Masaki

  Department Of Electronics And Communication Kyoto University

• Onodera Hidetoshi

  Faculty Of Engineering Kyoto University

• TAMARU Keikichi

  Okayama University of Science

• Tamaru K

  Okayama University Of Science

• Tamaru Keikichi

  Faculty Of Elctronics Kyoto University

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