A Leakage Reduction Scheme for Sleep Transistors with Decoupling Capacitors in the Deep Submicron Era(Electronic Circuits)
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概要
- 論文の詳細を見る
Sleep transistors such as MTCMOS and SCCMOS drastically reduce leakage current, but their ON resistances cause significant performance degradation. Larger sleep transistors reduce their ON resistances, but increase leakage current in a sleep mode. Decoupling capacitors beside sleep transistors reduce leakage current. Experimental results show that PMOS SCCMOS with a 4pF decoupling capacitor reduces leakage current by 1/673 on a 64 bit adder in a 90nm process.
- 社団法人電子情報通信学会の論文
- 2006-06-01
著者
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小野寺 秀俊
京都大学工学部電子工学科
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Kobayashi K
Toyama Prefectural Univ. Toyama‐ken Jpn
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Onodera H
Kyoto Univ. Kyoto‐shi Jpn
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Onodera Hidetoshi
Kyoto Univ. Kyoto‐shi Jpn
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小野寺 秀俊
滋賀県立大学工学部
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Kobayashi Kazutoshi
Graduate School Of Informatics Kyoto University
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Onodera Hidetoshi
Graduate School Of Informatics Kyoto University
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HIGUCHI Akihiko
Graduate School of Informatics, Kyoto University
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小野寺 秀俊
京都大学大学院工学研究科電子通信工学専攻
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Kobayashi Kazutoshi
Vlsi Design And Education Center The University Of Tokyo
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Kobayashi K
Yamatake Corporation
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Kobayashi K
Graduate School Of Informatics Kyoto University
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Higuchi Akihiko
Graduate School Of Informatics Kyoto University:(present Office)matsushita Electric Co. Ltd.
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小野寺 秀俊
京都大学情報学研究科通信情報システム専攻:京都大学光・電子理工学教育研究センター
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