70 nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method
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概要
- 論文の詳細を見る
70 nm silicon-oxide-nitride-oxide-silicon (SONOS) memory cells with an ultra-thin oxide-nitride-oxide (ONO) film on an silicon-on-insulator (SOI) wafer are fabricated. If we consider the program/erase threshold voltage window as 2 V, the program time is approximately 1 ms at an 8 V program voltage and the erase time is about 200 us at a $-6$ V erase voltage using FN write and the 2-sided hot hole injection method. It is observed that the 2-sided hot hole injection can completely erase the electrons in the ONO thin film on a 70 nm channel. The memory window is almost constant after 100,000 cycles, and the retention characteristics show that the threshold voltage after $10^{6}$ s is predicted as 0.75 V by extrapolation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Lee Jo-won
Material And Device Lab. Samsung Advanced Institute Of Technology
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Kim Moonkyung
Material And Device Lab. Samsung Advanced Institute Of Technology
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Kim Juhyung
Material And Device Lab. Samsung Advanced Institute Of Technology
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Jeong Younseok
Material And Device Lab. Samsung Advanced Institute Of Technology
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YOON Sewook
Material and Device Lab., Samsung Advanced Institute of Technology
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Ryu Wonil
Material And Device Lab. Samsung Advanced Institute Of Technology
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Kim Taehun
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Chae Soodoo
Material And Device Lab. Samsung Advanced Institute Of Technology
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Sung Sukkang
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Kim Chungwoo
Material And Device Lab. Samsung Advanced Institute Of Technology
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Sim Jaeseong
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Lee Changju
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Kim Chungwoo
Material and Device Lab., Samsung Advanced Institute of Technology, San 14 Nongseo-ri, Kihung-up, Yongin-si, Kyungki-do, Korea
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Kim Juhyung
Material and Device Lab., Samsung Advanced Institute of Technology, San 14 Nongseo-ri, Kihung-up, Yongin-si, Kyungki-do, Korea
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Kim Moonkyung
Material and Device Lab., Samsung Advanced Institute of Technology, San 14 Nongseo-ri, Kihung-up, Yongin-si, Kyungki-do, Korea
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Kim Taehun
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, College of Engineering, P.O. BOX 34, Seoul 151-742, Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, College of Engineering, P.O. BOX 34, Seoul 151-742, Korea
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Jeong Younseok
Material and Device Lab., Samsung Advanced Institute of Technology, San 14 Nongseo-ri, Kihung-up, Yongin-si, Kyungki-do, Korea
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Yoon Sewook
Material and Device Lab., Samsung Advanced Institute of Technology, San 14 Nongseo-ri, Kihung-up, Yongin-si, Kyungki-do, Korea
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Lee Changju
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, College of Engineering, P.O. BOX 34, Seoul 151-742, Korea
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Ryu Wonil
Material and Device Lab., Samsung Advanced Institute of Technology, San 14 Nongseo-ri, Kihung-up, Yongin-si, Kyungki-do, Korea
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Chae Soodoo
Material and Device Lab., Samsung Advanced Institute of Technology, San 14 Nongseo-ri, Kihung-up, Yongin-si, Kyungki-do, Korea
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Sung Sukkang
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, College of Engineering, P.O. BOX 34, Seoul 151-742, Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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