Good Ferroelectricity of Pb(Zr,Ti)O3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395°C
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概要
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Polycrystalline Pb(Zr,Ti)O3 (PZT) films were prepared on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si substrates at 395°C by source-gas-pulsed-introduced metal organic chemical vapor deposition (pulsed-MOCVD). By decreasing the deposition pressure from 670 to 67 Pa, a highly reproducible process was obtained irrespective of the type of substrate, used by accelerationing of the reevaporation of excess Pb from the surface of the film. It was found by X-ray diffraction reciprocal space mapping measurement that a reaction product of Pb and Pt, PbPtx, is formed at a deposition pressure of 67 Pa for the films deposited on the (111)Pt/TiO2/SiO2/Si substrate. However, this reaction product was not detected for those deposited on the (111)Ir/TiO2/SiO2/Si substrate. PZT films with ferroelectricity and a remanent polarization value of 40 μC/cm2 were fabricated on the (111)Ir/TiO2/SiO2/Si substrates with high reproducibility even at 395°C. This shows that Ir is a candidate bottom electrode for the highly reproducible preparation of MOCVD-PZT films having a good interface with the bottom electrode, good ferroelectricity and a remanent polarization value of 40 μC/cm2.
- Japan Society of Applied Physicsの論文
- 2003-09-15
著者
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Asano Gouji
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Oikawa Takahiro
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Saito Keisuke
PANalytical Application Laboratory, 7-3 Hamamatsucho 1-chome, Minato-ku, Tokyo 105-0013, Japan
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Oikawa Takahiro
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Asano Gouji
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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