Asano Gouji | Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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概要
- 同名の論文著者
- Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And Eの論文著者
関連著者
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Asano Gouji
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Oikawa Takahiro
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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HONDA Yoshihisa
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Yokoyama Shintaro
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Funakubo Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Morioka Hitoshi
Department Of Gynecology Saiseikai Shimonoseki General Hospital
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IIJIMA Takashi
National Institute of Advanced Industrial Science and Technology
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MATSUDA Hirofumi
National Institute of Advanced Industrial Science and Technology
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Okamoto Shoji
Department Of Dermatology School Of Medicine Chiba University
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Saito Keisuke
PANalytical Application Laboratory, 7-3 Hamamatsucho 1-chome, Minato-ku, Tokyo 105-0013, Japan
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Morioka Hitoshi
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
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Yokoyama Shintaro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Yokoyama Shintaro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
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Matsuda Hirofumi
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Honda Yoshihisa
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Honda Yoshihisa
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
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Oikawa Takahiro
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Oikawa Takahiro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
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Asano Gouji
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Asano Gouji
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Asano Gouji
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
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Okamoto Shoji
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Iijima Takashi
National Institute Advanced Industrial Science and Technology (AIST), Tsukuba Center 5, Tsukuba, Ibaraki 305-8565, Japan
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Iijima Takashi
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Japan
著作論文
- Crystal Orientation Dependence on Electrical Properties of Pb(Zr,Ti)O3 Thick Films Grown on Si Substrates by Metalorganic Chemical Vapor Deposition
- Compositional Dependence of Electrical Properties of Highly (100)-/(001)-Oriented Pb(Zr,Ti)O3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition
- Good Ferroelectricity of Pb(Zr,Ti)O3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395°C
- Highly-Reproducible Preparation of Pb(Zr, Ti)O3 Films at Low Deposition Temperature by Metal Organic Chemical Vapor Deposition