Si基板上にSeS_2を用いて接着した高品質GaAs薄膜の作製とそのデバイス応用

概要

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A new method of chemical bonding for GaAs on Si has been developed using SeS2. The bonding between GaAs and Si is very robust and withstands many processing steps. Using the epitaxial lift off (ELO) technique the thin film of GaAs is grafted to Si substrate. The film bonded by this method has longer minority carrier lifetime than heteroepitaxial GaAs film on Si. The current-voltage(I-V)characteristics of p-GaAs/n-Si, n-GaAs/n-Si, p-GaAs/p-Si and n-GaAs/p-Si were measured at room temperature. The I-V curve did not show a rectifying behavior when GaAs was bonded to Si with SeS2 because of the formation of a high-resistance layer at the interface. The characteristics were greatly improved bsuby small additions of Sn to SeS2 during the bonding process. The very low resistance is obtained with adding Sn in SeS2 during the bonding. The properties of solar cells using this method were compared with those grown on Si substrate by heteroepitaxy and GaAs substrate.
社団法人電気学会の論文
2003-12-01