超純水電解加工(超純水のみによる電気化学的加工方法)のCuダマシン平坦化プロセスへの適用開発

概要

論文の詳細を見る
Integrating a Low-K material into the Cu damascene wiring planarization process will require further improvements in planarization, including the resolution of problems involving material breakdown and peeling during polishing arising from the relative weakness of these materials. As a solution, we are developing Electro-Chemical Polishing in DI water (ECP-DI). ECP-DI involves removing material through the electrochemical interaction of OH^- ions in DI water and the surface atoms of a material to be processed. Since this processing method is based on electrochemical reactions, the surface of a material can be processed without mechanical damage. Using an ion exchanger as a dissociation catalyst and our own electrode, we confirmed that ECP-DI offers the following advantages over conventional CMP or conventional ECP when applied to the Cu damascene wiring planarization process : -Permits low processing pressures for reduced wafer damage, since removal rate is independent of processing pressure. Removal rate can be controlled by current density. -Enables superior planarization processing (capacity to detect differences in levels), a weakness of conventional ECP. -Lower operating costs, since no slurry or chemical is used.
社団法人電子情報通信学会の論文
2005-01-24