20704 STI-CMPに及ぼすナノトポグラフィの影響解析 : スラリ選択比に対する許容段差の定量的評価(機械工学が支援する半導体製造技術(I),OS13 機械工学が支援する半導体薄膜製造技術)

概要

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A relationship between allowable initial Peak-to-Valley heights (allowable PV) of a nanotopography and selectivity of slurry for CMP process making STI was analyzed quantitatively using a simple simulation method. The results show that the allowable PV became larger according to an increase of the selectivity. Moreover, in the case of the selectivity of thirty, the allowable PV were four times to eight times larger than the case with the selectivity of three. However, it is noted that the slurry for the process should have the ability of performing not only high selectivity but also small dishing.
社団法人日本機械学会の論文
2005-03-17