20114 フラッシュランプアニールの熱応力解析(機械工学が支援する先端デバイス評価技術,OS1 機械工学が支援する微細加工技術(半導体・MEMS・NEMS))

概要

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Flash lamp annealing is one of technologies for wafer heat treatment proposed as the next generation. However, problems such as wafer breakages sometimes occur because of large thermal stress inside of wafers. In order to identify the mechanism of the breakage, we simulated thermal stress during flash lamp annealing by a finite element method analysis. The results of the simulation showed that compressive stress could occur at a front surface and edge regions of a wafer, and tensile stress could occur at a back surface of a wafer. In addition, maximum compressive stress of 450MPa could occur at the center of the front surface. In the case of tensile stress, maximum value of 170MPa could occur at the center of the back surface. Also maximum shearing stress of slip direction, which was 225MPa, could be around the vicinity of a start point of the edge region of front surface.
社団法人日本機械学会の論文
2006-03-09