半導体素子特性に対するコンタクトホール内部の残留有機物薄膜の影響

概要

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In over-etching condition with CHF_3 and O_2 gas mixture organic thin films on semiconductor device remains in contact holes of silicon integrated circuit device. Test element group devices were fabricated under various etching conditions to study the effects of organic thin film characteristlcs. Current versus voltage (I-V) curves were measured on the contact holes filled with cbemical vapor deposited W as electrode materiaL. I-V curve of tbe contact hole that was additionally etched with CHF_3 and O_2 gas mixture was not linear and similar to the characteristic of MIM (Metal Insulator Metal) sturucture. A brigth thin irnage with 2-3 um thickness was found at the interface bctween silicon substrate and the contact hole by cross sectianal transmission electron microscopic observation with was attributed to the remnant organic thin film. By the emission microscopic observational several contact holes showed optical emission with two small peaks in their emission spectra. The non-linear I-V charactaistics and the optical emission spectra were well explained as the popaties of W/organic thin film/heavily doped silicon structure. As a result of electtical circuit simulation the heavy signal delay was expected due to the MIM characteristics of the contact hole with organic thin film
公益社団法人精密工学会の論文
1999-04-05