大気圧プラズマCVD法によるアモルファスSiの高速成膜に関する研究 (第2報) : 成膜速度の高速化

概要

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In the atmospheric pressure plasma CVD process, further investigations for higher deposition rate of amorphous silicon (a-Si) films were performed. High density silicon particles would be generated in gas phase for the high growth rate condition, so it was very important to remove particles for fabricating homogeneous silicon films. In order to remove silicon particles, flow analysis in the atmospheric pressure plasma CVD apparatus was performed. Furthermore, the surface of the silicon films made with different gas circulation rate was observed by SEM. The results showed that reactive gas could be drawn more efficiently by increasing the gas circulation rate from 340 ℓ/min to 1260 ℓ/min. It became possible to avoid sticking particles on the silicon film surface by employing the gas circulation pump with larger flow rate of 1260 ℓ/min. The maximum deposition rate without substrate scan was 1.6μm/s for the silane ratio of 5% and the input power of 2000W. In this condition, a-Si film of 0.5μm thick could be fabricated at the substrate scanning speed of 16mm/s.
公益社団法人精密工学会の論文
2000-10-05